Cart (Loading....) | Create Account
Close category search window
 

Hot-carrier-induced degradation for partially depleted SOI 0.25-0.1 μm CMOSFET with 2-nm thin gate oxide

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Wen-Kuan Yeh ; Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Taiwan ; Wen-Han Wang ; Yean-Kuen Fang ; Chen, Mao-Chieh
more authors

Hot-carrier-induced degradation of partially depleted SOI CMOSFETs was investigated with respect to body-contact (BC-SOI) and floating-body (FB-SOI) for channel lengths ranging from 0.25 down to 0.1 μm with 2 nm gate oxide. It is found that the valence-band electron tunneling is the main factor of device degradation for the SOI CMOSFET. In the FB-SOI nMOSFET, both the floating body effect (FBE) and the parasitic bipolar transistor effect (PBT) affect the hot-carrier-induced degradation of device characteristics. Without apparent FBE on pMOSFET, the worst hot-carrier stress condition of the 0.1 μm FB-SOI pMOSFET is similar to that of the 0.1 μm BC-SOI pMOSFET.

Published in:

Electron Devices, IEEE Transactions on  (Volume:49 ,  Issue: 12 )

Date of Publication:

Dec 2002

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.