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Experimental demonstration of an ultra-fast double gate inversion layer emitter transistor (DG-ILET)

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8 Author(s)
F. Udrea ; Dept. of Eng., Cambridge Univ., UK ; U. N. K. Udugampola ; K. Sheng ; R. A. McMahon
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In this letter we demonstrate experimentally a novel ultra-fast power device structure termed the double gate inversion layer emitter transistor (DG-ILET). The device is made in HV CMOS technology and its operation is based on a new physical injection mechanism previously reported and demonstrated experimentally (Udrea et al., 1996), namely the use of a MOS inversion layer as a minority carrier injector. The DG-ILET offers very fast turn-off associated with anode shorted lateral IGBT structures and low on-state voltage drop similar to standard lateral IGBTs without anode shorts. Unlike anode shorted structures, the DG-ILET does not exhibit a long, undesirable on-state snapback.

Published in:

IEEE Electron Device Letters  (Volume:23 ,  Issue: 12 )