Experimental study of total ionizing dose radiation effects on MOS capacitor

The aim of this paper is to investigate the total ionizing dose (TID) radiation effects on MOS capacitor wafer samples that are locally fabricated for this purpose. The oxide was prepared by a dry-wet-dry oxidation technique at 1000/spl deg/C using an N-type Si substrate of about 3 /spl Omega//cm. The samples have been exposed to irradiation at different doses from 1 krad(SiO/sub 2/) up to 1 Mrad(SiO/sub 2/) using two different gamma sources for high and low radiation rates. A shift in C-V curves, as a flat-band, shifted from 0.3 up to 2.5 V and interface states of irradiated samples increased from 2.45/spl times/10/sup 12/ up to 250/spl times/10/sup 12/ eV/sup -1/ cm/sup -2/. Shelf annealing effects have also been investigated.