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Simultaneous switching noise in on-chip CMOS power distribution networks

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2 Author(s)
K. T. Tang ; Broadcom Corp., San Jose, CA, USA ; E. G. Friedman

Simultaneous switching noise (SSN) has become an important issue in the design of the internal on-chip power distribution networks in current very large scale integration/ultra large scale integration (VLSI/ULSI) circuits. An inductive model is used to characterize the power supply rails when a transient current is generated by simultaneously switching the on-chip registers and logic gates in a synchronous CMOS VLSI/ULSI circuit. An analytical expression characterizing the SSN voltage is presented here based on a lumped inductive-resistive-capacitive RLC model. The peak value of the SSN voltage based on this analytical expression is within 10% as compared to SPICE simulations. Design constraints at both the circuit and layout levels are also discussed based on minimizing the effects of the peak value of the SSN voltage.

Published in:

IEEE Transactions on Very Large Scale Integration (VLSI) Systems  (Volume:10 ,  Issue: 4 )