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Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory

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3 Author(s)
Hang-Ting Lue ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Chien-Jang Wu ; Tseng, Tseung-Yuen

An improved theoretical analysis on the electrical characteristics of ferroelectric memory field-effect transistor (FeMFET) is given. First, we propose a new analytical expression for the polarization versus electric field (P-E) for the ferroelectric material. It is determined by one parameter and explicitly includes both the saturated and nonsaturated hysteresis loops. Using this expression, we then examine the operational properties for two practical devices such as the metal-ferroelectric-insulator-semiconductor field-effect transistor (MFIS-FET) and metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMIS-FET) as well. A double integral also has been used, in order to include the possible effects due to the nonuniform field and charge distribution along the channel of the device, to calculate the drain current of FeMFET. By using the relevant material parameters close to the (Bi, La)/sub 4/Ti/sub 3/O/sub 12/ (BIT) system, accurate analyses on the capacitors and FeMFET's at various applied biases are made. We also address the issues of depolarization field and retention time about such a device.

Published in:

Ultrasonics, Ferroelectrics and Frequency Control, IEEE Transactions on  (Volume:50 ,  Issue: 1 )

Date of Publication:

Jan. 2003

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