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A manufacturable 2 Gb NAND flash memory with 0.044 μm2 cell size, which is the smallest cell size ever reported in semiconductor memory, is successfully developed with 90 nm NAND flash technology for high density file storage application. The three main key technology features of 90 nm NAND flash technology are advanced KrF lithography with off-axis illumination system equipped with a dipole aperture, reduced stack height of cell, and optimized gate reoxidation affecting tunnel oxide profile.
Electron Devices Meeting, 2002. IEDM '02. International
Date of Conference: 2002