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A 2 Gb NAND flash memory with 0.044 μm2 cell size using 90 nm flash technology

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17 Author(s)
Dong-Chan Kim ; Adv. Technol. Dev., Samsung Electron. Co. Ltd., Kyungki-Do, South Korea ; Wang-Chul Shin ; Jae-Duk Lee ; Jin-Hyun Shin
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A manufacturable 2 Gb NAND flash memory with 0.044 μm2 cell size, which is the smallest cell size ever reported in semiconductor memory, is successfully developed with 90 nm NAND flash technology for high density file storage application. The three main key technology features of 90 nm NAND flash technology are advanced KrF lithography with off-axis illumination system equipped with a dipole aperture, reduced stack height of cell, and optimized gate reoxidation affecting tunnel oxide profile.

Published in:
Electron Devices Meeting, 2002. IEDM '02. International

Date of Conference: 2002

Page(s):
919 - 922
Print ISBN:
0-7803-7462-2
INSPEC Accession Number:
7509431
Digital Object Identifier :
10.1109/IEDM.2002.1175986
Product Type:
Conference Publications

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