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A 2 Gb NAND flash memory with 0.044 /spl mu/m/sup 2/ cell size using 90 nm flash technology

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17 Author(s)
Dong-Chan Kim ; Adv. Technol. Dev., Samsung Electron. Co. Ltd., Kyungki-Do, South Korea ; Wang-Chul Shin ; Jae-Duk Lee ; Jin-Hyun Shin
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A manufacturable 2 Gb NAND flash memory with 0.044 /spl mu/m/sup 2/ cell size, which is the smallest cell size ever reported in semiconductor memory, is successfully developed with 90 nm NAND flash technology for high density file storage application. The three main key technology features of 90 nm NAND flash technology are advanced KrF lithography with off-axis illumination system equipped with a dipole aperture, reduced stack height of cell, and optimized gate reoxidation affecting tunnel oxide profile.

Published in:

Electron Devices Meeting, 2002. IEDM '02. International

Date of Conference:

8-11 Dec. 2002

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