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Characterization of 2D dopant profile in L/sub eff/ /spl sim/ 20 nm MOSFETs by inverse modeling with precise /spl part/C//spl part/V, /spl part/V/sub th///spl part/V-L measurement

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4 Author(s)
I. Tanaka ; Fujitsu Labs. Ltd., Tokyo, Japan ; Y. Tagawa ; S. Satoh ; T. Sugii

Developed an inverse modeling technique to characterize two dimensional dopant profiles of MOSFETs with a sub-50 nm gate length. We have found precisely measured /spl part/C//spl part/V, /spl part/V/sub th///spl part/V-L data are systematically related to 2D dopant profiles. Our new approach enables us to reproduce detailed characteristics of short channel effects (V/sub th/ rolloff, S-factor rollup, DIBL increase), I-V, C-V, and I/sub on/-I/sub off/ down to L/sub eff/ /spl sim/ 20 nm.

Published in:

Electron Devices Meeting, 2002. IEDM '02. International

Date of Conference:

8-11 Dec. 2002