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A 90 nm DRAM technology has been successfully developed using 512 Mb DRAM for the first time. ArF lithography is used for printing critical layers with resolution enhancement techniques. A novel gap-filling technology using spin coating oxide is developed for STI and ILD processes. A diamond-shaped storage node is newly developed for large capacitor area with better mechanical stability. A CVD Al process can make the back-end metallization process simple and easy. A dual gate oxide scheme can provide independent optimization for memory cell transistor and periphery support device so that the off-state leakage current of the cell transistor can be maintained below 0.1 fA.
Electron Devices Meeting, 2002. IEDM '02. International
Date of Conference: 2002