By Topic

Analysis of reliability in low-temperature poly-Si thin film transistors using pico-second time-resolved emission microscope

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Uraoka, Y. ; Dept. of Mater. Sci., Nara Inst. of Sci. & Technol., Japan ; Hirai, N. ; Yano, H. ; Hatayama, T.
more authors

Analyzed degradation of n-ch TFT under dynamic stress using pico-second time-resolved emission microscope. We have successfully detected emission at pulse fall edge for the first time. Further we have also obtained hot electron current during the pulse fall using the device simulation considering transient effect.

Published in:

Electron Devices Meeting, 2002. IEDM '02. International

Date of Conference:

8-11 Dec. 2002