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Analysis of reliability in low-temperature poly-Si thin film transistors using pico-second time-resolved emission microscope

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5 Author(s)
Y. Uraoka ; Dept. of Mater. Sci., Nara Inst. of Sci. & Technol., Japan ; N. Hirai ; H. Yano ; T. Hatayama
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Analyzed degradation of n-ch TFT under dynamic stress using pico-second time-resolved emission microscope. We have successfully detected emission at pulse fall edge for the first time. Further we have also obtained hot electron current during the pulse fall using the device simulation considering transient effect.

Published in:

Electron Devices Meeting, 2002. IEDM '02. International

Date of Conference:

8-11 Dec. 2002