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This study shows new results on vertically scaled carbon nanotube field-effect transistors (CNFETs) focusing in particular on short-channel effects. We show clear evidence that state-of-the-art CNFETs behave as Schottky barrier (SB) transistors and that SB-CNFETs exhibit a very distinct scaling behavior. The relevant scaling rules that have to be applied to ensure the desired device operation and to avoid short-channel-like effects of CNFETs are discussed for the first time.
Electron Devices Meeting, 2002. IEDM '02. International
Date of Conference: 8-11 Dec. 2002