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FinFET scaling to 10 nm gate length

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14 Author(s)
Bin Yu ; Strategic Technol., Adv. Micro Devices Inc., Sunnyvale, CA, USA ; Leland Chang ; S. Ahmed ; Haihong Wang
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While the selection of new "backbone" device structure in the era of post-planar CMOS is open to a few candidates, FinFET and its variants show great potential in scalability and manufacturability for nanoscale CMOS. In this paper we report the design, fabrication, performance, and integration issues of double-gate FinFETs with the physical gate length being aggressively shrunk down to 10 nm and the fin width down to 12 nm. These MOSFETs are believed to be the smallest double-gate transistors ever fabricated. Excellent short-channel performance is observed in devices with a wide range of gate lengths (10/spl sim/105 nm). The observed short-channel behavior outperforms any reported single-gate silicon MOSFETs. Due to the [110] channel crystal orientation, hole mobility in the fabricated p-channel FinFET exceeds greatly that in a traditional planar MOSFET. At 105 nm gate length, the p-channel FinFET shows a record-high transconductance of 633 /spl mu/S//spl mu/m at a V/sub dd/ of 1.2 V. Working CMOS FinFET inverters are also demonstrated.

Published in:

Electron Devices Meeting, 2002. IEDM '02. International

Date of Conference:

8-11 Dec. 2002