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A 90 nm communication technology featuring SiGe HBT transistors, RF CMOS, precision R-L-C RF elements and 1 /spl mu/m2 6-T SRAM cell

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25 Author(s)
Kuhn, K. ; Portland Technol. Dev., Hillsboro, OR, USA ; Agostinelli, M. ; Ahmed, S. ; Chambers, S.
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This paper presents a highly-manufacturable process technology featuring SiGe HBT devices fully integrated into a 90 nm leading-edge high performance CMOS technology. The technology was developed on a 300 mm wafer platform, and supports process elements including RF CMOS devices, a MIM capacitor, precision resistors, high-Q inductors and varactors.

Published in:

Electron Devices Meeting, 2002. IEDM '02. International

Date of Conference:

8-11 Dec. 2002

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