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A 90-nm CMOS device technology with high-speed, general-purpose, and low-leakage transistors for system on chip applications

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30 Author(s)
Wu, C.C. ; Taiwan Semicond. Manuf. Co., Taiwan ; Leung, Y.K. ; Chang, C.S. ; Tsai, M.H.
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A leading edge 90nm bulk CMOS device technology is described in this paper. In this technology, multi Vt and multi gate oxide devices are offered to support low standby power (LP), general-purpose (G or ASIC), and high-speed (HS) system on chip (SoC) applications. High voltage I/O devices are supported using 70/spl Aring/, 50/spl Aring/, and 28/spl Aring/ gate oxide for 3.3V, 2.5V, and 1.5-1.8V interfaces, respectively. The backend architecture is based on nine levels of Cu interconnect with hot black diamond (HBD) low-k dielectric (k<=3.0).

Published in:

Electron Devices Meeting, 2002. IEDM '02. International

Date of Conference:

8-11 Dec. 2002