Skip to Main Content
A prototype silicon CMOS optical integrated circuit (Si CMOS OEIC) was designed and simulated using standard 0.8 μm Bi-CMOS silicon integrated circuit technology. The circuit consisted of an integrated silicon light emitting source, an optical wave-guiding structure, two integrated optical detectors and two high-gain CMOS trans-impedance based analogue amplifiers. Simulations with MicroSim PSpice software predict a typical mean bandwidth capability of 185 MHz for the trans-impedance amplifier for detected photo-currents at the input of the amplifier in the range of 1 nA to 100 nA and driving a 10 kΩ load. First iteration waveguiding structures were realised in 1.2 μm CMOS technology for various source-waveguide-detector arrangements. Signal coupling ranging from 1 nA to 1 μA was detected at the detectors. The technology seems favourable for first-iteration implementations as diverse opto-electronic applications in silicon - CMOS integrated circuitry.