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High frequency optical integrated circuit design and first iteration realisation in standard silicon CMOS integrated circuitry

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5 Author(s)
Snyman, L.W. ; Dept. of Electron. Eng., Technikon Pretoria, South Africa ; Bogalecki, A. ; Canning, L.M. ; Du Plessis, M.
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A prototype silicon CMOS optical integrated circuit (Si CMOS OEIC) was designed and simulated using standard 0.8 μm Bi-CMOS silicon integrated circuit technology. The circuit consisted of an integrated silicon light emitting source, an optical wave-guiding structure, two integrated optical detectors and two high-gain CMOS trans-impedance based analogue amplifiers. Simulations with MicroSim PSpice software predict a typical mean bandwidth capability of 185 MHz for the trans-impedance amplifier for detected photo-currents at the input of the amplifier in the range of 1 nA to 100 nA and driving a 10 kΩ load. First iteration waveguiding structures were realised in 1.2 μm CMOS technology for various source-waveguide-detector arrangements. Signal coupling ranging from 1 nA to 1 μA was detected at the detectors. The technology seems favourable for first-iteration implementations as diverse opto-electronic applications in silicon - CMOS integrated circuitry.

Published in:

Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on

Date of Conference:

18-19 Nov. 2002