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Monte Carlo study of the breakdown of an AlInAs/GaInAs HEMT on InP with an InP etch stop layer

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5 Author(s)

This paper deals with the evaluation of AlInAs/GaInAs HEMTs (high electron mobility transistors) with an InP etch stop layer (IESL) for power applications in the millimeter and submillimeter wave ranges. We use a 2D Monte Carlo model in order to analyze the capability of the device to handle high voltage with small gate length.

Published in:

Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on

Date of Conference:

18-19 Nov. 2002