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Role of electron traps in the radiation hardness of thermally nitrided silicon dioxide

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4 Author(s)
Ramesh, K. ; Dept. of Electr. Eng., Indian Inst. of Technol., Bombay, India ; Agarwal, A. ; Chandorkar, A.N. ; Vasi, J.

A number of samples of thermally nitrided SiO/sub 2/ with varying concentrations of electron traps were studied in an attempt to correlate the radiation-induced oxide charge with the number of electron traps. Also studied were the detrapping characteristics of irradiated devices. Etch-back experiments were performed to locate the centroid of the trapped charge. The results show that electron trapping does play a role in the improved radiation hardness of nitrided SiO/sub 2/, but is not the sole cause of it.<>

Published in:

Electron Device Letters, IEEE  (Volume:12 ,  Issue: 12 )

Date of Publication:

Dec. 1991

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