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Breakdown-voltage memory effect in a neon-filled diode at 1 mbar

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2 Author(s)
Maluckov, C.A. ; Tech. Fac. at Bor, Univ. of Belgrade, Serbia ; Radovic, M.K.

Results of the investigation of the breakdown-voltage distribution dependence on the relaxation time of the diode [the curve U~b~=f(τ)], i.e., memory effect, in neon at p=1 mbar are presented in this paper. The memory effect is determined for the diode-relaxation times 0.1-100 s. The applied voltage was linearly increased with the increasing rate 10 V/s. For each value of the relaxation time, the series of 200 successive and independent measurements were done. The numerical fitting of the theoretical expression of the breakdown-voltage distribution on the histograms of the experimentally established data was used to determined relative yield in the diode for the different relaxation times Y/Y0=f(τ). Results show that the yield in the diode decreased in that time interval in one order of magnitude. Quantitative parameters for two-step decreasing and qualitative explanation of these dependencies are given.

Published in:

Plasma Science, IEEE Transactions on  (Volume:30 ,  Issue: 4 )

Date of Publication:

Aug 2002

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