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Summary form only given. Highly compact microlasers integrated on silicon, emitting in the 1.3-1.6 μm range are important building blocks for future photonic integrated circuits that could be developed for applications such as optical interconnects. In-plane emission and low threshold are desirable for these devices, to be compatible with dense photonic integration. In this paper, we report on the fabrication of InP membrane laser micro-sources integrated on a silicon wafer, based on 2D Photonic Crystal (PC) structures. The PC consists of a triangular lattice of holes formed in the thin membrane. The basic integration procedure includes wafer scale InP transfer onto silicon via SiO2-SiO2 bonding and conventional nanofabrication technologies.
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE (Volume:2 )
Date of Conference: 10-14 Nov. 2002