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Summary form only given. Fabrication process technology and measurement results for two different embedded detector structures are described: thin film InGaAs photodetectors embedded in a polymer waveguide and below a polymer waveguide, with both exhibiting efficient coupling. To create the embedded detector waveguide structures, thin film photodetectors are fabricated through substrate removal, bonded to a SiO2-coated Si substrate, and a polymer waveguide is subsequently deposited onto the photodetector and patterned into a channel. The theoretical coupling efficiency was calculated based using the bi-directional beam propagation method (BPM). The calculated coupling efficiency was 60.2% for direct coupling (BCB) and 59.3% for evanescent field coupling (ULTEM/BCB).