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Summary form only given. We demonstrate 1.3 μm electroluminescence from a QD ensemble, MOCVD-grown on an n-GaAs substrate. We discuss optimized QD growth using MOCVD as well as characterization of the ensembles. By optimizing key parameters including growth temperature, V/III ratio, deposition rate and system pressure, we achieve surface densities of 8×1010/cm2, and electroluminescence at 1.3 μm with a full width at half maximum of 40 meV.