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Electroluminescence and materials characterization of InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

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7 Author(s)
D. L. Huffaker ; Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA ; A. R. EL-Emawy ; S. Birudavolu ; P. S. Wong
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Summary form only given. We demonstrate 1.3 μm electroluminescence from a QD ensemble, MOCVD-grown on an n-GaAs substrate. We discuss optimized QD growth using MOCVD as well as characterization of the ensembles. By optimizing key parameters including growth temperature, V/III ratio, deposition rate and system pressure, we achieve surface densities of 8×1010/cm2, and electroluminescence at 1.3 μm with a full width at half maximum of 40 meV.

Published in:

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE  (Volume:2 )

Date of Conference:

10-14 Nov. 2002