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Single-event testing using heavy ion irradiation through thick layers of material

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3 Author(s)
Swift, G.M. ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA ; Millward, D.G. ; Clark, H.L.

Upset results for backside irradiated PowerPC750s (thin epi) and SDRAMs (deep charge collection from diffusion) illustrate the validity of single event test data when irradiating through a layer of silicon substrate. However, heavy-ion LET assignments require accurate material and thickness determination. Taking irradiating through materials further, the Texas A&M cyclotron uses adjustable degraders to offer a continuous range of heavy ion LETs as well as an optional in-air test fixture.

Published in:

Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on

Date of Conference:

10-14 Sept. 2001