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Analysis of total dose tolerance of LOCOS isolated MOSFET by 2D self consistent simulations

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2 Author(s)
A. Torres ; DAM Ile-de-France, CEA, Bruyeres-le-Chatel, France ; O. Flament

The total dose tolerance of parasitic LOCOS field transistors is analyzed using 2D self consistent simulations. The influence of process parameters such as the substrate doping level is examined through both experimental and simulation results to improve the understanding of ionizing effects on isolation.

Published in:

Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on

Date of Conference:

10-14 Sept. 2001