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We use a 10-band k/spl middot/p Hamiltonian to investigate gain characteristics of 1.3- /spl mu/m InGaAsN-GaAs 7-nm quantum-well lasers as a function of indium and nitrogen content. The parameters used were obtained by comparison with experimental transition energy data and fitting to measured spontaneous-emission line broadening. We conclude that optimum device performance is obtained by including the minimum amount of nitrogen necessary to prevent strain relaxation at the given well thickness.
Date of Publication: Jan. 2003