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Monolithic InGaAs PIN photodetector-GaAs MHEMT amplifier OEIC fabrication and implementation for 28 GHz LMDS applications

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4 Author(s)
A. M. Joshi ; Discovery Semicond. Inc., Ewing, NJ, USA ; Xinde Wang ; D. Becker ; D. Mohr

We have fabricated a monolithic Opto-electronic Integrated Circuit (OEIC) comprising of an InGaAs PIN photodetector and a Common Gate Amplifier (CGA) using Metamorphic High Electron Mobility Transistors (MHEMTs) on 4 inch GaAs substrates. The OEIC shows a gain of 28 dB at 28 GHz with an 8 GHz FWHM.

Published in:

Microwave Photonics, 2002. International Topical Meeting on

Date of Conference:

5-8 Nov. 2002