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100-mW kink-free blue-violet laser diodes with low aspect ratio

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9 Author(s)
Asano, T. ; Dev. Center, Sony Shiroishi Semicond. Inc., Miyagi, Japan ; Tojyo, T. ; Mizuno, T. ; Takeya, M.
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400-nm-band GaN-based laser diodes (LDs) operating with a kink-free output power of over 100 mW and having a low aspect ratio of 2.3 have been successfully fabricated for the first time. A new ridge structure, in which the outside of the ridge is covered with a stacked layer of Si on SiO2 and the ridge width is as narrow as 1.5 μm, is applied to realize high kink-free output power with a wide beam divergence angle parallel to the junction plane. A new layer structure around the active layer is demonstrated to be quite effective for obtaining a narrow beam divergence angle perpendicular to the junction plane, maintaining low threshold current. Ten LDs with low aspect ratio have been operated stably for over 1000 h under 30-mW continuous-wave operation at 60°C. Relative intensity noise measured under optical feedback with high-frequency modulation is as low as -125 dB/Hz. These results indicate that this LD is suitable for next-generation high-density optical storage systems.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:39 ,  Issue: 1 )