By Topic

A low-voltage low-power voltage reference based on subthreshold MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Giustolisi, G. ; DEES, Catania Univ., Italy ; Palumbo, G. ; Criscione, M. ; Cutri, F.

In this work, a new low-voltage low-power CMOS voltage reference independent of temperature is presented. It is based on subthreshold MOSFETs and on compensating a PTAT-based variable with the gate-source voltage of a subthreshold MOSFET. The circuit, designed with a standard 1.2-μm CMOS technology, exhibits an average voltage of about 295 mV with an average temperature coefficient of 119 ppm/°C in the range -25 to +125°C. A brief study of gate-source voltage behavior with respect to temperature in subthreshold MOSFETs is also reported.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:38 ,  Issue: 1 )