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Preparation, morphology, and gas-sensing behavior of Cr2-xTixO3+z thin films on standard silicon wafers

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6 Author(s)
J. Wollenstein ; Fraunhofer Inst. of Phys. Meas. Techniques, Freiburg, Germany ; G. Plescher ; G. Kuhner ; H. Bottner
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The effect of humidity on chromium titanium oxide (Cr2-xTixO3+z, CTO), on both baseline resistance and sensitivity, is small compared to SnO2. This has been the key to development of thick-film sensors based on CTO, for detection of carbon monoxide and ammonia in synthetic air. Thin-film structures on silicon substrates offer the possibility to use fabricating, bonding and housing equipment and, hence, a low cost gas sensor production is possible. CTO thin-film sensors on silicon substrates use conventional photolithography, sputtering and evaporation techniques. A Ta/Pt resistance layer (25/200-nm thick) for heating the device to its operating temperature and interdigital electrodes are evaporated and structured on a silicon substrate which is covered by a 1-μm SiO2 insulating layer. The polycrystalline p-type CTO is deposited onto the electrodes by oxidizing reactive sputtering or evaporation of Cr/Ti-sandwich structures. The resulting sensors were characterized by means of energy dispersive X-ray analysis, secondary electron microscopy, and X-ray diffraction pattern. Also, gas responses toward NO2, NH3, CO and CH4, and different humidity, were investigated.

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IEEE Sensors Journal  (Volume:2 ,  Issue: 5 )