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X-band MIC GaAs power FET amplifier module

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4 Author(s)
Hua Tserng ; Texas Instruments, Inc., Dallas, TX, USA ; Macksey, H. ; Doerbeck, F. ; Wisseman, W.

The design and fabrication of a 9-10GHz MIC three-stage GaAs FET amplifier module will be described. An output power of 1.6W with 20dB gain and 28% efficiency has been achieved.

Published in:

Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International  (Volume:XXI )

Date of Conference:

15-17 Feb. 1978