By Topic

Punch-through MOSFET for high-speed logic

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
T. Nakamura ; Fujitsu Laboratories, Ltd., Kawasaki, Japan ; M. Yamamoto ; H. Ishikawa ; M. Shinoda

This paper will describe punch-through mode operation of a submicron gate MOSFET for high-speed and low-power logic ICs. Switching delays of 90ps and minimum power-delay products of 2fJ have been obtained with ring oscillators.

Published in:

Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International  (Volume:XXI )

Date of Conference:

15-17 Feb. 1978