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A device characterization and circuit design procedure for realizing high-power millimeter-wave IMPATT diode amplifiers

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1 Author(s)
Peterson, D., III ; MIT Lincoln Laboratory, Lexington, MA, USA

A characterization technique affording realization of Ka-band (33-42 GHz) IMPATT amplifiers exhibiting 4% generation efficiencies, 200-mW added power and 5-GHz bandwidths with device temperatures of 200°C will be described.

Published in:

Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International  (Volume:XVI )

Date of Conference:

14-16 Feb. 1973