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The interaction of technology and performance in complementary-symmetry MOS integrated circuits

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2 Author(s)
Ahrons, R. ; RCA Electronic Componenets, Somerville, N.J., USA ; Gardner, R.

The technology of complementary MOS has already resulted in significant advantages in circuit simplicity, speed-power, and noise immunization. Future technological improvements to increase device gain, reduce capacity, and increase packing density will make complementary MOS even more attractive. The relationships among device physics, processing technology and performance will be presented.

Published in:

Solid-State Circuits Conference. Digest of Technical Papers. 1969 IEEE Internationa  (Volume:XII )

Date of Conference:

19-21 Feb. 1969

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