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AlGaN/GaN-HEMTs for power applications up to 40 GHz

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11 Author(s)
Kiefer, R. ; Fraunhofer-Inst. fur Angewandte Festkorperphysik, Freiburg, Germany ; Quay, R. ; Muller, S. ; Kohler, K.
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A 0.15 μm T-gate AlGaN/GaN-HEMT 2-inch technology has been developed. Transistors with 120 μm gatewidth show a peak transconductance of 300 mS/mm and cut-off frequencies ft and fmax of 65 GHz and 149 GHz, respectively. Large periphery 720 μm gatewidth devices are capable of CW operation up to 40 GHz yielding an output power of 0.91 W and a linear gain of 6 dB at 35 GHz. To the authors' knowledge these results represent the highest absolute power level so far achieved with a GaN-HEMT in the Ka-band.

Published in:

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Date of Conference:

6-8 Aug. 2002

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