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Ohmic contact technology in III-V nitrides using polarization effects in cap layers

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5 Author(s)
Gessmann, Th. ; Dept. of Electr. & Comput. Eng., Boston Univ., MA, USA ; Graff, J.W. ; Li, Y.-L. ; Waldron, E.L.
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A novel technology for low-resistance ohmic contacts to III-V nitrides is presented. The contacts employ polarization-induced electric fields in strained cap layers grown on lattice-mismatched III-V nitride buffer layers. With appropriate choice of the cap layer, the electric field in the cap layer reduces the thickness of the tunnel barrier at the metal contact/semiconductor interface. Design rules for polarization-enhanced contacts are presented giving guidance for composition and thickness of the cap layer for different III-V nitride buffer layers. Experimental results for ohmic contacts with p-type InGaN and GaN cap layers are markedly different from samples without a polarized cap layer thus confirming the effectiveness of polarization-enhanced ohmic contacts.

Published in:

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Date of Conference:

6-8 Aug. 2002