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Impact ionization in high performance AlGaN/GaN HEMTs

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6 Author(s)
Brar, B. ; Rockwell Sci. Co., Thousand Oaks, CA, USA ; Boutros, K. ; DeWarnes, R.E. ; Tilak, V.
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We report compelling evidence of impact ionization in high-performance AlGaN/GaN HEMTs. Relevant to the present paper, these devices also show excellent low-leakage DC properties that contain signatures of impact ionization in the output and sub-threshold characteristics. Temperature and bias dependent data are presented to support the identification of impact ionization in the devices.

Published in:

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Date of Conference:

6-8 Aug. 2002

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