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Comparison of surface passivation on films for reduction of current collapse in AlGaN/GaN high electron mobility transistors

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15 Author(s)
Luo, B. ; Dept. of Chem. Eng., Florida Univ., Gainesville, FL, USA ; Mehandru, R. ; Kim, J. ; Ren, F.
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Three different passivation layers (SiNx, MgO and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced chemical vapor deposited SiNx produced ∼80-85% recovery of the drain-source current, independent of whether SiH4/NH3 or SiD4/ND3 plasma chemistries were employed. Both the Sc2O3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-95% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.

Published in:

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Date of Conference:

6-8 Aug. 2002

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