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AlGaN/GaN HEMT high-power and low-noise performance at f≥20 GHz

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13 Author(s)
Smorchkova, I.P. ; TRW Space & Electron. Group, Redondo Beach, CA, USA ; Wojtowicz, M. ; Tsai, R. ; Sandhu, R.
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Reports on the power and noise performance of AlGaN/GaN HEMTs in the K (18-27 GHz) band. At 20 GHz, a record CW output power of 2 W with an associated gain of 8 dB and PAE of 33% has been achieved on an 8-finger 0.2 μm×500 μm device. Minimum noise figure of 1.4 dB has been achieved on a 0.15 μm×200 μm device at 26 GHz. The data demonstrate the viability of AlGaN/GaN HEMTs for high-frequency power and LNA applications.

Published in:

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Date of Conference:

6-8 Aug. 2002