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Silicon tunnel diodes formed by proximity rapid thermal diffusion

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6 Author(s)
Jinli Wang ; Dept. of Electr. Eng., Notre Dame Univ., IN, USA ; Wheeler, D. ; Yan Yan ; Jialin Zhao
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We demonstrate the first silicon tunnel diodes formed using proximity rapid thermal diffusion and spin-on diffusants. Room temperature peak-to-valley current ratio (PVR) of 2 is obtained at approximately 100 A/cm2 peak current density. Secondary ion mass spectroscopy is used to compare proximity rapid thermal diffusion with rapid thermal diffusion from spin-coated diffusants in direct contact with a device wafer. The proximity rapid thermal diffusion approach provides a cleaner wafer surface for subsequent processing and yields tunnel diodes with good local uniformity.

Published in:

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Date of Conference:

6-8 Aug. 2002