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AlGaAsSb-InGaAsSb-GaSb epitaxial heterostructures for uncooled infrared detectors

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5 Author(s)
Sulima, Oleg V. ; AstroPower Inc., Newark, DE, USA ; Datta, S. ; Cox, J.A. ; Mauk, M.G.
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Lattice matched n-type AlGaAsSb-InGaAsSb-GaSb heterostructures for uncooled infrared detectors, including separate absorption and multiplication avalanche photodiodes (SAM-APD), as well as low-voltage InGaAsSb APDs, were grown using inexpensive liquid phase epitaxy. Formation of the pn-junction was performed through diffusion of Zn from the vapor phase. Responsivity at λ=2 μm as high as 3.5 A/W was achieved in InGaAsSb APD biased at 8 V with the avalanche multiplication starting at 6 V. Our calculations have shown that the above parameters can result in a NEP value as low as 1×10-12 W or D* value as high as 2×1010 cm×Hz12//W at room temperature for 400 μm diameter (200 μm diameter photoactive area) APDs.

Published in:

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Date of Conference:

6-8 Aug. 2002