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MMIC compatible AlSb/InAs HEMT with stable AlGaSb buffer layers

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10 Author(s)
Tsai, R. ; Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA ; Barsky, M. ; Lee, J. ; Boos, J.B.
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In this paper, we present state-of-the-art fT and fmax results of 130 GHz, and 110 GHz for AlSb/InAs HEMTs with AlGaSb/AlSb metamorphic buffer layers that demonstrate InAs-channel HEMTs that are stable with exposure to air and are compatible with standard MMIC production processes.

Published in:

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Date of Conference:

6-8 Aug. 2002