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Silicon-germanium power devices at low temperatures for deep-space applications

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2 Author(s)
A. Vijh ; Nanotechnology Res. Center, Toledo Univ., OH, USA ; V. J. Kapoor

Silicon-germanium heterostructure. based 1-watt n-channel metal-oxide-semiconductor modulation-doped field effect transistors (MOS-MODFETs) with 6 μm gate lengths and 1 mm total gate widths have been designed, fabricated and tested from 300 K to 90 K. The devices were fabricated by an ion-implanted process and employ a low-temperature thermal oxide and PECVD deposited oxide as the gate insulator. The devices showed a saturation current of approximately 77 mA at VDS=14 V, VGS=5V at 90 K, corresponding to a power dissipation of 1 W. Because they employ oxide as a gate dielectric, the devices have a low gate leakage current of <1 nA at VGS=10 V.

Published in:

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Date of Conference:

6-8 Aug. 2002