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InP/InGaAs heterojunction bipolar transistors grown on Ge/P co-implanted InP substrates by metal-organic molecular beam epitaxy

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8 Author(s)
Sung, W.J. ; Lucent Technol. Bell Labs., Murray Hill, NJ, USA ; Kopf, R.F. ; Werder, D.J. ; Liu, C.T.
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InP/InGaAs Heterojunction Bipolar Transistors (HBTs) have demonstrated excellent high-frequency performance and are widely used for optical fiber transmission. However, the current mesa HBT structure utilizes a very thick, highly doped n+InGaAs layer for the subcollector contact. This added mesa height makes multi-level interconnection processes more difficult, which impedes the capability of fabricating compact integrated circuits. In addition, InP has a much higher thermal conductivity than InGaAs, so heat dissipation may be a problem for densely packed circuits with the above structure. This paper reports on InP/InGaAs HBTs grown on Ge/P co-implanted substrates by Metal-Organic Molecular Beam Epitaxy (MOMBE). This embedded subcollector HBT structure offers several advantages for the fabrication of large-scale integrated circuits on InP substrates.

Published in:

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Date of Conference:

6-8 Aug. 2002