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RF 4H-SiC bipolar junction transistors

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4 Author(s)
Perez-Wurfl, I. ; Colorado Univ., Boulder, CO, USA ; Konstantinov, A. ; Torvik, J. ; Van Zeghbroeck, B.

We report on the progress towards a silicon carbide (SiC) bipolar transistor aimed at operation at RF frequencies up to 3 GHz. Devices with a 5 μm emitter stripe width were fabricated and tested on-chip with cascade probes and an HP8510C network analyzer. These devices have an ft/fmax of 0.6/0.2GHz. To best of our knowledge the devices represent a first demonstration of an RF 4H-SiC BJT.

Published in:

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Date of Conference:

6-8 Aug. 2002