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Advanced large-signal modeling of GaN-HEMTs

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8 Author(s)
Berroth, M. ; Inst. of Electr. & Opt. Commun. Eng., Univ. of Stuttgart, Germany ; Chigaeva, E. ; Dettmann, I. ; Wieser, N.
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For improved non-linear modeling of AlGaN/GaN high electron mobility transistors, a large-signal model originally developed for GaAs-based devices has been extended by introduction of a thermal sub-circuit to account for self-heating. Thereby, DC output characteristics which typically show negative output conductance at a high dissipating power level are well reproduced. Since self-heating also effects the transconductance, which is related to S21 at RF conditions, the comparison of broadband S-parameter simulations and measurements revealed significant improvement when using the extended model. First experimental and theoretical investigations on the transient behavior at pulsed conditions are finally presented.

Published in:

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Date of Conference:

6-8 Aug. 2002

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