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Zero defects or zero stuck-at faults-CMOS IC process improvement with IDDQ

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3 Author(s)
Soden, J.M. ; Sandia Nat. Lab., Albuquerque, NM, USA ; Fritzemeier, R.R. ; Hawkins, C.F.

The authors suggest that continuous quality improvement with the goal of zero defects requires a physical defect metric which goes beyond 100% SAF (stuck-at-fault) coverage. It is further suggested that I DDQ testing is a highly efficient technique for detecting most dominant types of CMOS IC defects and therefore should be considered for the manufacture of high-quality, high reliability CMOS ICs

Published in:
Test Conference, 1990. Proceedings., International

Date of Conference: 10-14 Sep 1990

Page(s):
255 - 256
Meeting Date :
10 Sep 1990-14 Sep 1990
Print ISBN:
0-8186-9064-X
INSPEC Accession Number:
3976201
Conference Location :
Washington, DC
Digital Object Identifier :
10.1109/TEST.1990.114026
Product Type:
Conference Publications

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