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In this paper, the design and measurement results of asynchronous monostable-bistable transition logic element (MOBILE) gates are analyzed. By taking advantage of the multi-state behavior of resonant tunneling devices (RTD) the logic depth and the circuit complexity per logic function is reduced at the gate level. The precharge and evaluation phase have been merged into a single phase which decreases the pipeline overhead. Due to the combination of a three terminal device (HBT) with the two terminal RTD the vertical resonant tunneling bipolar transistor (RTBT) has enhanced driving capabilities and is a promising candidate as a precursor for future nano-scaled asynchronous circuits.