Referenced Items are not available for this document.
Hybrid integrated photoreceivers with up to 65 GHz bandwidth are presented. They consist of GaInAs/AlGaInAs/AlInAs multimode waveguide photodiodes, flip-chip bonded on GaAs-based pseudomorphic HEMT distributed amplifiers with a very low input impedance. The overall O/E conversion gain is as high as 120 V/W at 1.55 μm wavelength.
Published in:
Electronics Letters
(Volume:38
,
Issue:
25
)
Date of Publication: 5 Dec 2002
- Page(s):
- 1706 - 1707
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 7484372
- Digital Object Identifier :
- 10.1049/el:20021097
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 January 2003
- Issue Date :
- 5 Dec 2002
- Sponsored by :
- Institution of Engineering and Technology
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