Skip to Main Content
Hybrid integrated photoreceivers with up to 65 GHz bandwidth are presented. They consist of GaInAs/AlGaInAs/AlInAs multimode waveguide photodiodes, flip-chip bonded on GaAs-based pseudomorphic HEMT distributed amplifiers with a very low input impedance. The overall O/E conversion gain is as high as 120 V/W at 1.55 μm wavelength.
Date of Publication: 5 Dec 2002