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65 GHz bandwidth optical receiver combining a flip-chip mounted waveguide photodiode and GaAs-based HEMT distributed amplifier

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9 Author(s)
Leich, M. ; Fraunhofer-Inst. of Appl. Solid-State Phys., Freiburg, Germany ; Hurm, V. ; Sohn, J. ; Feltgen, T.
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Hybrid integrated photoreceivers with up to 65 GHz bandwidth are presented. They consist of GaInAs/AlGaInAs/AlInAs multimode waveguide photodiodes, flip-chip bonded on GaAs-based pseudomorphic HEMT distributed amplifiers with a very low input impedance. The overall O/E conversion gain is as high as 120 V/W at 1.55 μm wavelength.

Published in:

Electronics Letters  (Volume:38 ,  Issue: 25 )