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Ambient Effect On Ionic Charges in Dielectric Films

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1 Author(s)
Swaroop, B. ; Kelsey-Hayes Research and Dev. Center

The effect of various annealing ambients on the ionic charges contained in the dielectric structures of silicon dioxide-silicon and silicon nitride-silicon dioxide-silicon was investigated. It has been observed that most effective ambients in making ionic species immobile are nitrogen and a mixture of nitrogen and hydrogen chloride gases. Further, silicon nitride used as passivating dielectric films over semiconductor devices has been observed to be an effective barrier for ionic impurities.

Published in:

Parts, Hybrids, and Packaging, IEEE Transactions on  (Volume:9 ,  Issue: 4 )

Date of Publication:

Dec 1973

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