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The nuclear and space industries require electronics with higher tolerance to radiation than that currently available. The recently developed 300°C electronics technology based on junction field-effect transistor (JFET) thick film hybrids was tested up to 109rad (Si) in a gamma source and 1016neutrons/cm2. Circuits and individual components from this technology all survived this total dose although some devices required 1 h of annealing at 200°C or 300°C to regain functionality. This technology used with real time annealing should function to levels greater than 1010rad(Si) and 1016neutrons/cm2.
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on (Volume:4 , Issue: 4 )
Date of Publication: Dec 1981