Referenced Items are not available for this document.
The nuclear and space industries require electronics with higher tolerance to radiation than that currently available. The recently developed 300°C electronics technology based on junction field-effect transistor (JFET) thick film hybrids was tested up to 109rad (Si) in a gamma source and 1016neutrons/cm2. Circuits and individual components from this technology all survived this total dose although some devices required 1 h of annealing at 200°C or 300°C to regain functionality. This technology used with real time annealing should function to levels greater than 1010rad(Si) and 1016neutrons/cm2.
Published in:
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
(Volume:4
,
Issue:
4
)
Date of Publication: Dec 1981
- Page(s):
- 466 - 471
- ISSN :
- 0148-6411
- Digital Object Identifier :
- 10.1109/TCHMT.1981.1135835
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 January 2003
- Issue Date :
- Dec 1981
- Sponsored by :
- IEEE Components, Packaging, and Manufacturing Technology Society
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