Skip to Main Content
The results from a unified study of high-voltage damage and low-frequency noise in thick-film resistors are presented. Material microstructure and the mechanisms for charge transport and I/f noise are discussed to provide a basis for the interpretation of the experimental results. Experimental results showing a definite relationship between high-voltage damage and low-frequency noise are presented and interpreted. It is shown that noise parameters are extremely sensitive to the condition of interfacial regions within the conductive phase of the thick-film material. Because of this sensitivity to conductive-phase microstructure, noise measurements are recommended as a diagnostic tool for research on thick-film materials and as a diagnostic tool for quality-assurance efforts in the production environment.