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High-Voltage Damage and Low-Frequency Noise in Thick-Film Resistors

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3 Author(s)
Stevens, E. ; Joint Center for Graduate Study,Richland, WA ; Gilbert, D. ; Ringo, John A.

The results from a unified study of high-voltage damage and low-frequency noise in thick-film resistors are presented. Material microstructure and the mechanisms for charge transport and I/f noise are discussed to provide a basis for the interpretation of the experimental results. Experimental results showing a definite relationship between high-voltage damage and low-frequency noise are presented and interpreted. It is shown that noise parameters are extremely sensitive to the condition of interfacial regions within the conductive phase of the thick-film material. Because of this sensitivity to conductive-phase microstructure, noise measurements are recommended as a diagnostic tool for research on thick-film materials and as a diagnostic tool for quality-assurance efforts in the production environment.

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Parts, Hybrids, and Packaging, IEEE Transactions on  (Volume:12 ,  Issue: 4 )