Electrical characteristics of coupled buried microstrip lines were obtained using a recently developed two-dimensional TEM transmission line parameter modeling tool. The capacitance [C] and inductance matrix [L] parameters were used in a lossless TEM mode transmission line transient response calculator to determine the maximum coupled noise. It is found that there is a critical depth of bury hcbelow which the lines appear to be within an infinite dielectric and above which there is coupling to the polarization charge on the dielectric interface. This often results in very complicated Coupled noise behavior as the coupling of the lines is capacitive at One depth of bury and inductive at another depth of bury. Parameter simulation and maximum noise results are given for a wide variety of structures important in integrated circuit electronic packaging structures.